Energy consumption will continue to increase the level of production increases while ensuring its growth. Economic development is physical and perfectly automatic based on controlled machines, only consumed energy and can only be accelerated by increasing the level of production.

In this article, valence electron state density, energy band parameters, energetic, optical and electrophysical properties of metal oxide and silicide films with thickness ≤ 40 Å formed on Si/Cu surface during ion implantation and annealing were studied.

The composition, morphology, and electronic structure of SiO2 nanofilms of different thicknesses created by thermal oxidation on the Si(111) surface were studied in this work. It was shown that up to a thickness of 30-40 Å the film has an island character. At d ≥ 60 Å, a homogeneous continuous film of SiO2 is formed, the stoichiometric surface roughness does not exceed 1.5 – 2 nm. Regardless of the thickness of the SiO2 films, no noticeable interdiffusion of atoms is observed at the SiO2-Si boundary. The patterns of changes in the composition, the degree of surface coverage, and the energy of plasma oscillations were determined when the thickness of the SiO2/Si(111) films varied from 20 to 120 Å.

Ushbu maqolada Atmel ATmega48, Atmel ATmega88 va Atmel ATmega168 mikrokontrollerlarini taqqoslash ko`rib chiqildi.

Структурный, ЖК- дисплеи два из прозрачных стеклянных пластин состоит из они есть _ между жидкость кристаллический вещество есть. Тарелки внутренний на поверхности электроды есть они есть _ прозрачный электричество проницаемый фильмы. Необходимый в виде электроды (сегменты) высокие на тарелке, генерал электрод пока нижний на тарелке располагается _ К электродам контроль напряжения используется.