ELECTRONIC SPECTROSCOPY OF HETEROSYSTEM SI/CU SURFACES WITH NANOSCALE PHASES AND FILMS

07.02.2024 "Modern Science and Research" xalqaro ilmiy jurnali 1 seriyasi. Volume 3 Issue 2

Abstract. In this article, valence electron state density, energy band parameters, energetic, optical and electrophysical properties of metal oxide and silicide films with thickness ≤ 40 Å formed on Si/Cu surface during ion implantation and annealing were studied.

Keywords: thermal oxidation